Method for producing a thin film, and a semiconductor device hav

Details Method for producing a thin film, and a semiconductor device hav Method for producing a thin film, and a semiconductor device hav

1994-09-20

1995-06-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437965, 117108, 136258, 136265, H01L 2120

Patent

active

054223040

ABSTRACT:
Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

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