Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-10-03
1994-02-01
Silbaugh, Jan H.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419212, 427 62, 4274193, 505731, H01L 3912, B05D 302
Patent
active
052832333
ABSTRACT:
A method for producing a superconducting layer of YBa.sub.2 CU.sub.3 O.sub.7 on a sapphire substrate utilizes the steps of epitaxially growing an intermediate layer that at least contains a yttrium-stabilized zirconium oxide layer directly on the substrate, and then epitaxially growing a superconducting layer on the intermediate layer. In one embodiment, the step of growing the intermediate layer grows two sub-layers, with the first sub-layer being a yttrium-stabilized zirconium oxide layer and a second sub-layer being a yttrium oxide layer applied onto the first sub-layer.
REFERENCES:
patent: 4880772 (1989-11-01), Penderson et al.
patent: 5015623 (1991-05-01), Scholten
K. Char et al, "Microwave surface resistance of epitaxial YBa.sub.2 Cu.sub.3 O.sub.7 thin films on sapphire", Appl. Phys. Lett vol. 57, No. 4, 23 Jul. 1990, pp. 409-411.
K. Konushi et al, "Epitaxial Growth of Zirconia and Yttria Stabilized Zirconia Films on Sapphire Substrates by Reactive Sputtering", Mat. Res. Soc. Symp. Proc., vol. 56, 1986, pp. 259-264.
Schmidt et al, "Epitaxial YBa.sub.2 Cu.sub.3 O.sub.x thin films on sapphire using a Y-stabilized ZrO.sub.2 buffer layer", Applied Physics Letters, vol. 59, No. 2, 8 Jul. 1991, pp. 222-224.
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Myoren et al, "As-Grown Preparation of Superconducting Epitaxial Ba.sub.2 YCu.sub.3 O.sub.x Thin Films Sputtered on Epitaxially Grown ZrO.sub.2 /Si(100)", Japanese Journal of Applied Physics, vol. 28, No. 3, Mar. 28, 1989, pp. 351-355.
Hess et al, "Preparation and patterning of YBaCUO thin films obtained by sequential deposition of CuO.sub.x /Y.sub.2 O.sub.3 /BaF.sub.2 ", Applied Physics Letters, vol. 53, No. 8, Aug. 22, 1988, pp. 698-699.
Boucher et al, "Comparison de l'Ablation Laser et de la Pulverisation DC-Magnetron pour l'Epitaxie de Films YBa.sub.2 Cu.sub.3 O.sub.7-x a Partir de Monocibles", Le Vide, Les Couches Minces, vol. 45, No. 252, 1990, pp. 170-171. Jul. 1990.
Hradil Klaudia
Schmidt Harald
Wersing Wolfram
Fiorilla Christopher A.
Siemens Aktiengesellschaft
Silbaugh Jan H.
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