Method for producing a strained layer on a substrate and...

Details Method for producing a strained layer on a substrate and... Method for producing a strained layer on a substrate and...

2005-09-22

2011-11-01

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S005000, C117S008000, C117S009000

Reexamination Certificate

active

08048220

ABSTRACT:
The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.

REFERENCES:
patent: 5244970 (1993-09-01), Kobayashi et al.
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 5886385 (1999-03-01), Arisumi et al.
patent: 6455894 (2002-09-01), Matsumoto et al.
patent: 6464780 (2002-10-01), Mantl et al.
patent: 6573126 (2003-06-01), Cheng et al.
patent: 6699764 (2004-03-01), Tweet et al.
patent: 6703293 (2004-03-01), Tweet et al.
patent: 6765227 (2004-07-01), Yu et al.
patent: 6787852 (2004-09-01), Yu et al.
patent: 6876010 (2005-04-01), Fitzgerald
patent: 6900094 (2005-05-01), Hammond et al.
patent: 7064387 (2006-06-01), Jang
patent: 7078771 (2006-07-01), Kim
patent: 7084075 (2006-08-01), Kluth et al.
patent: 7256463 (2007-08-01), Matsumoto et al.
patent: 7416965 (2008-08-01), Mantl et al.
patent: 7615471 (2009-11-01), Mantl
patent: 2002/0005561 (2002-01-01), Kobayashi et al.
patent: 2002/0055661 (2002-05-01), Kiihling et al.
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2004/0178406 (2004-09-01), Chu
patent: 2006/0211221 (2006-09-01), Mantl et al.
patent: 2006/0220127 (2006-10-01), Mantl
patent: WO 2004/081982 (2004-09-01), None
patent: WO 2004/081982 (2004-09-01), None
Peters, R.L. et al; Crystal-direction dependence of uniaxial tensil strain in ultra-thin SOI; IEEE International SOI Conference; Oct. 2004; pp. 39-41.
Aguilar, M.Enciso et al; Strained Si HFETs for microwave applications: state-of-the-art and further approaches; Solid-State Electronics (www.sciencedirect.com); #48 (2004) pp. 1443-1452.
Buca, D., et al; Tensely strained silicon on SiGe produced by strain transfer; Applied Physics Letters; vol. 85, No. 13; Sep. 2004; pp. 2499-2501.

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