Method for producing a stop zone in a semiconductor body and...

Details Method for producing a stop zone in a semiconductor body and... Method for producing a stop zone in a semiconductor body and...

2006-06-08

2010-02-23

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

C257S617000

Reexamination Certificate

active

07667297

ABSTRACT:
A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of:providing a semiconductor body having a first and a second side and a basic doping of a first conduction type,irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side,carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

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