Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-06-12
2007-06-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C438S460000
Reexamination Certificate
active
10450528
ABSTRACT:
Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.
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Fournel Franck
Magnea Noel
Moriceau Hubert
Zussy Marc
Commissariat a l''Energie Atomique
Le Thao P.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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