Method for producing a spatially periodic semiconductor layer st

Details Method for producing a spatially periodic semiconductor layer st Method for producing a spatially periodic semiconductor layer st

1988-12-08

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG58, 148DIG40, 148DIG72, 148DIG132, 148DIG160, 357 16, 437106, 437110, 437126, 437131, 437959, 437976, H01L 29205

Patent

active

048430285

ABSTRACT:
In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.

REFERENCES:
patent: 4450316 (1984-05-01), Hamakawa et al.
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Manaserit et al., "The Properties of Si/Si.sub.1-x Ge.sub.x Films . . . Chemical Vapor Deposition," J. Elect. Mat., vol. 12, No. 4, 1983, pp. 637-650.
Abstreiter et al., "Strain-Induced Two-Dimensional . . . " Physical Review Letters, vol. 54, No. 22, Jun. 3, 1985, pp. 2441-2444.
Manaserit et al., "Electron Mobility Enhancement . . . ", Appl. Phys. Lett. 41(5), 1 Sep. 1982, pp. 464-466.
Kasper et al., "A One-Dimensional SiGe Superlattice . . . ", Appl Phys., vol. 8, 1975, pp. 199-205.
Itoh et al., "Epitaxial Growth of Silicon . . . ", Radiation effects, 1971, vol. 9, pp. 1-4.
Konig et al., "Si-MBE: Growth and Sb Doping", J. Vac. Sci. Technol., 16(4), Jul./Aug. 1979, pp. 985-989.

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