Method for producing a solid state imaging device

Details Method for producing a solid state imaging device Method for producing a solid state imaging device

1996-09-25

1997-09-23

Trinh, Michael

Fishing, trapping, and vermin destroying

437 3, 437 53, H01L 2170

Patent

active

056703821

ABSTRACT:
A solid state imaging device reduces the occurrence of crosstalk between a plurality of picture elements arranged in a linear or matrix form. The solid state imaging device includes a plurality of photosensitive cells formed on a first principal surface of a semiconductor substrate, a transfer electrode formed in a gap area among the cells on the first principal surface to read out charges produced in the cells, a drive metal wiring formed on the transfer electrode within the gap area, a first insulating film covering the cells with a predetermined thickness, and a plurality of metal reflecting films formed on the first insulating film so that the whole surface of each of the metal reflecting films forms a reflecting surface substantially parallel to a surface of each of the cells on the side of the first principal surface. Light passed through the photosensitive cells from a side opposite to the first principal surface is reflected back to each of the photosensitive cells.

REFERENCES:
patent: 4276099 (1981-06-01), Keen et al.
patent: 4608749 (1986-09-01), Harada et al.
patent: 4795722 (1989-01-01), Welch et al.
patent: 5015592 (1991-05-01), Moldovan
patent: 5089425 (1992-02-01), Hoshi et al.
"A 512.times.512-Element PtSi Schottky-Barrier Infrared Image Sensor"; Kimata et al; IEEE Journal of Solid State Circuits vol. sc-22, No. 6, Dec. 1987, pp. 1124-1129.

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