Method for producing a silicon thin film by MBE using silicon be

Details Method for producing a silicon thin film by MBE using silicon be Method for producing a silicon thin film by MBE using silicon be

1986-12-08

1989-05-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG17, 148DIG25, 148DIG169, 156612, 437106, 437108, 437112, 437946, 437939, H01L 21203, H01L 21205

Patent

active

048331007

ABSTRACT:
The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam epitaxy method. Silicon molecular beams are irradiated onto the substrate under the conditions wherein a substrate temperature is kept at 700.degree. to 900.degree. C. and an intensity of the molecular beams is kept within a range from 1.times.10.sup.12 atoms/cm.sup.2 .multidot.sec to 1.times.10.sup.13 atoms/cm.sup.2 .multidot.sec to clean a surface of the substrate and then the intensity of the molecular beams is increased to form the single crystalline silicon film. Thus, the substrate can be cleaned without being defected.

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Ghandi, "VLSI Fabrication Principles", John Wiley & Sons, New York, NY, 4/5/1983, pp. 215, 216, 281-283.

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