Method for producing a silicon technology transistor on a noncon

Details Method for producing a silicon technology transistor on a noncon Method for producing a silicon technology transistor on a noncon

1994-07-13

1995-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437913, 148DIG150, H01L 2186

Patent

active

054398363

ABSTRACT:
Method for producing a silicon technology transistor on a nonconductor. This method consists in particular of forming a thin film of silicon (6) on a nonconductor (4) and then a mask (8, 10) including one opening (13) at the location provided for the channel (26) of the transistor; of locally oxidizing (14) the unmasked silicon to form an oxidation film; of eliminating the mask; of forming source (18) and drain (20) regions in the silicon by ion implantation with the oxidation film being used to mask this implantation; of eliminating the oxidation film; and of forming a thin gate nonconductor between the source and the drain and then forming the gate.

REFERENCES:
patent: 5116771 (1992-05-01), Karulkar
patent: 5162254 (1992-11-01), Usui et al.
patent: 5294555 (1994-03-01), Mano et al.
Akasaka et al., "Self-Aligned Silicide Technology for Ultra-Thin SIMOX MOSFET's, IEEE Transactions in Electron Devices, " vol. 39, No. 5 (May 1992).
Hisamoto et al., "Ultra-Thin SOI CMOS with Selective CVD Tungsten for Low Resistance Source and Drain, " IEEE Transactions on Electron Devices (Arp. 1992).
Omura et al., "0.1-.mu.m-Gate, Ultrathin-Film CMOS Devices Using SIMOX Substrate with 80-nm-Thick Buried Oxide Layer," IEEE Transactions on Electron Devices (Sep. 1991).

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