Method for producing a silicon single crystal having few crystal

Details Method for producing a silicon single crystal having few crystal Method for producing a silicon single crystal having few crystal

1998-10-16

2000-02-22

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 20, C30B 1520

Patent

active

060275626

ABSTRACT:
A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

REFERENCES:
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5611857 (1997-03-01), Akashi et al.
patent: 5817171 (1998-10-01), Sakurada et al.
Nakamura, et al. "Formation Process of Grown-In Defects in Czochralski Grown Silicon Crystals," Journal of Crystal Growth 180 (1997), pp. 61-72.

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