Method for producing a silicon single crystal by a float-zone me

Details Method for producing a silicon single crystal by a float-zone me Method for producing a silicon single crystal by a float-zone me

1994-06-15

1996-09-17

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 49, 117 50, 117204, C30B 1302

Patent

active

055564615

ABSTRACT:
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.

REFERENCES:
patent: 5089082 (1992-01-01), Dreier et al.
patent: 5114528 (1992-05-01), Kou
Japanese Abstract No. 63-274685, "Device for Producing Single Crystal by Infrared Heating", Nov. 11, 1988.
2300 Journal of Crystal Growth 128 (1993) pp. 282-287, Mar. I, Nos. 1/4, Amsterdam, NL, "Facet formation in silicon single crystals grown by VMFZ method," M. Kimura et al.

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