Method for producing a silicon single crystal and a silicon...

Details Method for producing a silicon single crystal and a silicon... Method for producing a silicon single crystal and a silicon...

2011-03-22

2011-03-22

Song, Matthew J (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S011000, C117S013000, C117S021000, C117S928000, C117S931000, C117S932000

Reexamination Certificate

active

07909930

ABSTRACT:
A method for producing a silicon single crystal by the Czochralski method with carbon-doping comprising: charging a polycrystalline silicon material and any one of a carbon dopant selected from the group consisting of an organic compound, an organic compound and a silicon wafer, carbon powder and a silicon wafer, an organic compound and carbon powder, and an organic compound and carbon powder and a silicon wafer into a crucible and melting the polycrystalline silicon material and the carbon dopant; and then growing a silicon single crystal from the melt of the polycrystalline silicon material and the carbon dopant. And a carbon-doped silicon single crystal produced by the method. Thereby, there is provided a method for producing a silicon single crystal with carbon-doping in which the crystal can be doped with carbon easily at low cost, and carbon concentration in the crystal can be controlled precisely.

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