Method for producing a silicon single crystal

Details Method for producing a silicon single crystal Method for producing a silicon single crystal

1999-02-12

2000-10-24

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117217, C30B 1518

Patent

active

061360902

ABSTRACT:
A method of producing a single crystal by Czochralski method by contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot, wherein a pulling condition is controlled according to a cumulative time of use of a heater surrounding the crucible. The pulling conditions to be controlled may induce the relative position of the heater and the crucible, the number of rotations of the crucible, the number of rotations of the crystal, or an atmosphere pressure in the furnace and a gas volume of flowing. Also described is a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and a single crystal can be produced stably.

REFERENCES:
patent: 3621213 (1971-11-01), Jen et al.
patent: 5089238 (1992-02-01), Araki et al.
patent: 5096677 (1992-03-01), Katsuoka et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5551978 (1996-09-01), Akashi et al.

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