Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1994-03-11
1996-03-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 37, 117 40, 117 50, 117933, C30B 1306
Patent
active
054995981
ABSTRACT:
Silicon granules filled in a nonconductive cylinder are locally heated from outside of the cylinder using a local heating means, for example, a radio-frequency induction heating coil etc. to form a silicon granule sintering portion and a silicon melting portion, with gradually moving the local heating means in such a manner that the positions of the sintering portion and of the melting portion can be moved gradually. Concomitantly with the movement of the positions of the sintering portion and the melting portion, the melting portion in the original position is solidified to produce a silicon rod. According to this method, molten silicon is formed without contacting the inner wall surface of the cylinder and then solidified so that there can be obtained a silicon rod containing no impurities derived from the material of the cylinder.
REFERENCES:
patent: 3454367 (1969-07-01), Reuschel
patent: 3781209 (1973-12-01), Reuschel et al.
patent: 4094730 (1978-06-01), Rahilly
patent: 4394183 (1983-07-01), Jackson et al.
patent: 4572812 (1986-02-01), Ciszek
patent: 4915723 (1990-04-01), Kaneko et al.
patent: 5211802 (1993-05-01), Kaneko et al.
patent: 5367981 (1994-11-01), Maruyama
patent: 5436164 (1995-07-01), Dumler et al.
Kunemund Robert
Tokuyama Corporation
LandOfFree
Method for producing a silicon rod does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a silicon rod, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a silicon rod will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1953779