Method for producing a silicon-on-insulator capacitive surface m

Details Method for producing a silicon-on-insulator capacitive surface m Method for producing a silicon-on-insulator capacitive surface m

1994-10-31

1995-11-28

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437901, 437927, 73718, H01L 2146, G01L 912

Patent

active

054707978

ABSTRACT:
A method and structure for forming a capacitive transducer having a deformable single crystal diaphragm. A first well region is formed within a semiconductor substrate in an SOI wafer having a sacrificial layer of known thickness and a top single-crystal silicon layer thereon. Next, a silicon, epitaxial layer is deposited on the top silicon layer for forming a flexible single crystal membrane. The epitaxial layer and the sacrificial layer are masked and etched to define the flexible diaphragm. An electrical insulating conformal support layer is deposited on the substrate and attached to the diaphragm so as to seal the sacrificial layer therebetween. An access opening is etched through the diaphragm, and then a wet etchant is inserted through the access opening for removing the sacrificial layer, thereby defining a diaphragm cavity between the remaining epitaxial layer and the substrate. Conductive ions are diffused into facing sections of the diaphragm and the first well of the substrate so as to define fixed and deformable electrodes of the sensing capacitor. Next, a plug is selectively deposited within and for sealing the access opening without substantially reducing the volume of the diaphragm cavity.

REFERENCES:
patent: 4495820 (1985-01-01), Shimada et al.
patent: 4838088 (1989-06-01), Murakami
patent: 4849071 (1989-07-01), Evans et al.
patent: 5095401 (1992-03-01), Zavracky et al.
patent: 5316619 (1994-05-01), Mastrangelo
patent: 5321989 (1994-06-01), Zimmer et al.
patent: 5332469 (1994-07-01), Mastrangelo

Affiliated with

Also associated with

Rating

Method for producing a silicon-on-insulator capacitive surface m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a silicon-on-insulator capacitive surface m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a silicon-on-insulator capacitive surface m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2013423