Method for producing a semiconductor substrate

Details Method for producing a semiconductor substrate Method for producing a semiconductor substrate

2007-10-23

2010-11-16

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000

Reexamination Certificate

active

07833877

ABSTRACT:
This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.

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Search report, French application No. 06 09466 dated May 4, 2007.
G. Celler, Frontiers of Silicon-on-Insulator,Journal of Applied Physics, vol. 93, No. 9, pp. 4955-4978 (2003).

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