Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-03-08
2009-11-10
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S311000, C257SE21568, C257SE21331
Reexamination Certificate
active
07615466
ABSTRACT:
The invention relates to a process of treating a structure for electronics or optoelectronics, wherein the structure that has a substrate, a dielectric layer having a thermal conductivity substantially higher than thermal conductivity of an oxide layer made of an oxide of a semiconductor material, an oxide layer made of an oxide of the semiconductor material, and a thin semiconductor layer made of the semiconductor material. The process includes a heat treatment of the structure in an inert or reducing atmosphere with a temperature and a duration chosen for inciting an amount of oxygen of the second oxide layer to diffuse through the semiconductor layer so that the thickness of the second oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics applications through the use of this type of heat treatment.
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Lindsay, Jr. Walter L
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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