Method for producing a semiconductor laser using selective epita

Details Method for producing a semiconductor laser using selective epita Method for producing a semiconductor laser using selective epita

1990-06-14

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG95, 437133, 437129, H01L 2120, H01L 21205

Patent

active

050285629

ABSTRACT:
A semiconductor laser includes, serially disposed, a semiconductor substrate of a first conductivity type, a semiconductor current blocking layer of a second conductivity type opposite the first conductivity tyupe, a first semiconductor cladding layer of the first conductivity type, an active semiconductor layer, a second semiconductor cladding layer of the second conductivity type, and a semiconductor contacting layer of the second conductivity type, and a structure for laterally confining the transverse flow of electrical current through the layers, the structure including a portion of the first cladding layer being disposed in a longitudinal groove extending through the current blocking layer into the substrate and high resistance longitudinal stripes disposed adjacent the groove between the second cladding layer and the current blocking layer, the high resistance stripes forming discontinuities in the active semiconductor layer.

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"Visible GaAlAs V-Channeled Substrate Inner Strip Laser with Stabilized Mode Using p-GaAs Substrate", Yamamoto et al., App. Phy. Lett. 40(5), 03/01/82, pp. 372-374.
"Very Low Threshold Buried-VSIS Lasers," Yamamoto et al., pp. 69-74.

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