Method for producing a semiconductor laser element

Details Method for producing a semiconductor laser element Method for producing a semiconductor laser element

1980-09-10

1981-12-22

Walton, Donald L.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29583, 148175, H01L 3118

Patent

active

043063519

ABSTRACT:
A method for producing semiconductor laser elements from a wafer wherein the wafer is prepared having light emitting regions and then the wafer is scribed and cracked in order to form the semiconductor elements. The scribing is executed on a major surface of the wafer in such a way that scratches are formed along a separation line only on the surface of a crystal substrate of the wafer but not on the substrate over the formed light emitting regions. The cleaved surface developed by the cracking step is very flat in an area where the light emitting region is exposed to provide a mirror surface that forms a laser resonator. Desirably, the major surface of the wafer is covered with a protective film on at least the part of the surface over the light emitting region, prior to performing the scribe step. More desirably, this protective film consists of an electrode metal, such as Au or a resin, such as a photoresist material. The scribing is executed wherein scratches are not formed on the crystal substrate surface under the region that is covered with the protection film. This method effectively realizes the cleavage process and results in excellent reproducibility of the physical dimensions of the laser element, while obtaining highly satisfactory characteristics of a laser resonator.

REFERENCES:
patent: 3349475 (1967-10-01), Marinace
patent: 3762973 (1973-10-01), Gobrail
patent: 3816906 (1974-06-01), Falckenberg
patent: 3916510 (1975-11-01), Martin
patent: 4236296 (1980-12-01), Woolhouse et al.

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