Method for producing a semiconductor laser device

Details Method for producing a semiconductor laser device Method for producing a semiconductor laser device

1992-12-22

1995-05-09

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437962, 437184, 148DIG95, 148DIG26, 148DIG104, 148DIG106, 148DIG143, H01L 2120

Patent

active

054139562

ABSTRACT:
A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

REFERENCES:
patent: 4230997 (1980-10-01), Hartman et al.
patent: 4563368 (1986-01-01), Tihanyi et al.
patent: 4839308 (1989-06-01), Fye
patent: 4910166 (1990-03-01), Dholakia
patent: 4985370 (1991-01-01), Ponjee et al.
patent: 5171706 (1992-12-01), Matsumoto et al.
patent: 5228047 (1993-07-01), Matsumoto et al.
Patent Abstracts of Japan, vol. 13, No. 147, (E-741) Apr. 11, 1989.
Patent Abstracts of Japan, vol. 13, No. 264, (E-774) Jun . 19, 1989.
Patent Abstracts of Japan, vol. 11, No. 61, (E-483) Feb. 25, 1987.
Patent Abstracts of Japan, vol. 16, No. 79, (E-1171) Feb. 26, 1992.
Patent Abstracts of Japan, vol. 10, No. 325, (E-451) Nov. 6, 1986.
Patent Abstracts of Japan, vol. 14, No. 358, (E-958) Jul. 31, 1990.
Patent Abstracts of Japan, vol. 9, No. 230, (E-343) Sep. 17, 1985.
Sasaki, K., et al. "Realization of highly reliable high-power operation of single-stripe AlGaAs lasers by the formation of window grown facets" Japanese Journal of Applied Physics, Supplements, Extended Abstracts International Conference on Solid State Devices and Materials, Yokohama, Japan, Aug. 27, 1991.
Patent Abstracts of Japan, vol. 13, No. 226, (E-763) May 25, 1989.

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