Method for producing a semiconductor laser device

Details Method for producing a semiconductor laser device Method for producing a semiconductor laser device

1989-07-11

1990-10-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG25, 148DIG66, 148DIG95, 372 48, 437 81, 437117, 437133, H01L 2120

Patent

active

049668633

ABSTRACT:
A semiconductor laser device includes a current blocking structure having a p-n-p-n structure, provided on a first conductivity type semiconductor substrate, an active region buried in a stripe shaped groove produced in the current blocking structure, a lower cladding layer grown by liquid phase epitaxy approximately filling the stripe groove, an active layer on the lower cladding layer in the stripe groove, a waveguide layer on the active layer completely filling the groove, and a diffraction grating on the waveguide layer.

REFERENCES:
patent: 4355396 (1982-10-01), Hawrylo et al.
patent: 4504952 (1985-03-01), Hartman et al.
patent: 4509996 (1985-04-01), Greene et al.
patent: 4573255 (1986-03-01), Gordon et al.
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4675710 (1987-06-01), Ishikawa et al.
patent: 4701995 (1987-10-01), Dolan et al.
patent: 4728625 (1988-03-01), Namizaki et al.
patent: 4837775 (1989-06-01), Andrews et al.
patent: 4879724 (1989-11-01), Matsumoto et al.
Ohshima et al., "Stable Longitudinal-Mode InGaAsP/InP . . . Laser", IEEE J. Quantum Electronics, vol. QE-21, No. 6, Jun. 1985, pp. 563-567.
Alfreov et al., ". . . Injection Lasers Fabricated by Hybrid Vapor and Liquid-Phase Epitoxy", Sov. Tech. Phys. Lett., vol. 12, No. 5, May 1986, pp. 236-237.

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