Method for producing a semiconductor laser

Details Method for producing a semiconductor laser Method for producing a semiconductor laser

1994-07-21

1996-06-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437107, 437126, 437133, 437228, H01L 2120

Patent

active

055232566

ABSTRACT:
A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.

REFERENCES:
patent: 5018158 (1991-05-01), Okada et al.
patent: 5054031 (1991-10-01), Hosoba et al.
patent: 5182228 (1993-01-01), Sekii et al.
patent: 5268328 (1993-12-01), Mori et al.
patent: 5288659 (1994-02-01), Koch et al.

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