Method for producing a semiconductor including a foreign...

Details Method for producing a semiconductor including a foreign... Method for producing a semiconductor including a foreign...

2011-05-24

2011-05-24

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S044000, C438S226000, C438S245000, C438S269000, C438S357000, C438S360000, C438S388000, C438S413000, C438S416000, C438S424000, C438S695000, C438S699000, C438S700000, C257SE29012, C257SE21257, C257SE21546, C257SE21548, C257SE21564

Reexamination Certificate

active

07947569

ABSTRACT:
A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.

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