Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1996-12-23
2000-10-10
Nguyen, Nam
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
061300101
ABSTRACT:
In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.
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Buck et al., "A Comparison of Wet and Dry Chrome Etching with the CORE-2564", 42-49, Dec. 31, 1994.
Shimanoe et al., "Etching Mask Pattern and Manufacturing Method for an Intricate Device Using This Etching Mask Pattern", English translation, Jun. 10, 1994.
"Si Micro Machining Advanced Studies," Published by Science Forum on Mar. 31, 1992, P117-118.
Ao Kenichi
Ishio Seiichiro
Denso Corporation
Nguyen Nam
Ver Steeg Steven H.
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