Method for producing a semiconductor device with a floating gate

Details Method for producing a semiconductor device with a floating gate Method for producing a semiconductor device with a floating gate

1985-05-17

1986-11-04

Smith, John D.

Metal working

Method of mechanical manufacture

Assembling or joining

427 86, 427 93, 427 94, 430314, 148 15, H01L 2176

Patent

active

046203613

ABSTRACT:
A method for producing a semiconductor device comprises a step of forming a first gate insulation layer on a portion of a single crystal silicon substrate and forming a floating gate of polycrystalline silicon on the first gate insulation layer, a step of forming an oxide layer on the exposed portion of the substrate and on the floating gate, and a step of forming a control gate on the floating gate through the oxide layer. In the formation of the oxide layer, a nitride pattern layer is formed on the floating gate, the entire structure is oxidized by using the nitride pattern layer as a mask, thus forming a protective layer on the exposed portion of the substrate, the nitride pattern layer is removed, and the entire structure is again oxidized, thus forming a second gate insulation layer on the floating gate.

REFERENCES:
patent: 4373248 (1983-02-01), McElroy
patent: 4459325 (1984-07-01), Nozawa

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