Method for producing a semiconductor device with a doped polysil

Details Method for producing a semiconductor device with a doped polysil Method for producing a semiconductor device with a doped polysil

1993-12-21

1995-04-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437156, 437193, H01L 2122

Patent

active

054078571

ABSTRACT:
There is provided a semiconductor device wherein a resistor layer is interposed between a semiconductor region and a surface electrode metal so as to improve a safe operation area of the device and enhance the secondary breakdown strength thereof, and a method for producing such a semiconductor device including steps of forming a n-type semiconductor region and/or a p-type semiconductor region in a semiconductor substrate by impurity doping; forming contact holes in a protective film formed on the semiconductor substrate; forming polysilicon electrode films on the semiconductor regions exposed in the contact holes, respectively; making respective impurities of the semiconductor regions diffuse into the polysilicon electrode films by a heat treatment; and forming a surface electrode metal on the polysilicon electrode films.

REFERENCES:
patent: 3443175 (1969-05-01), Czorny et al.
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4280854 (1981-07-01), Shibata et al.
patent: 4648175 (1987-03-01), Metz, Jr. et al.
patent: 5017507 (1991-05-01), Miyazawa

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