Method for producing a semiconductor device utilizing V-groove e

Details Method for producing a semiconductor device utilizing V-groove e Method for producing a semiconductor device utilizing V-groove e

1984-02-10

1985-10-15

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148175, 148187, 148DIG85, 148DIG117, 156647, 156648, 156649, 357 50, 357 52, 357 55, H01L 21302, H01L 2176

Patent

active

045465371

ABSTRACT:
In a semiconductor device comprising at least one bipolar transistor and a VIP isolating layer which are formed in both an epitaxial layer and a semiconductor substrate, an impurity-introduced region having the same conductivity type as that of the semiconductor substrate is formed so as to surround the V-groove. A buried layer of the bipolar transistor comes into contact with the VIP isolating layer to divide the impurity-introduced region into two parts, one of which is combined with a base region and the other one of which serves as a channel stopper.

REFERENCES:
patent: 3873383 (1975-03-01), Kooi
patent: 3933540 (1976-01-01), Kondo et al.
patent: 4008107 (1977-02-01), Hayasaka et al.
patent: 4026736 (1977-05-01), Lesk
patent: 4137109 (1979-01-01), Aiken et al.
patent: 4231057 (1980-10-01), Momma et al.
patent: 4255207 (1981-03-01), Nicolay et al.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor device utilizing V-groove e does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor device utilizing V-groove e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device utilizing V-groove e will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2430763