Method for producing a semiconductor device using logic simulati

Details Method for producing a semiconductor device using logic simulati Method for producing a semiconductor device using logic simulati

1995-04-27

1996-07-09

Trans, Vincent N.

Boots, shoes, and leggings

364488, G06F 1750, G06G 748

Patent

active

055351468

ABSTRACT:
In a method for producing a semiconductor device using a logic simulation approach, a circuit model for a user-specified design of a multi-peak resonant tunneling diode-based electronic circuit is provided and includes a plurality of circuit devices. One of the circuit devices is a multi-peak resonant tunneling diode which is modeled by a parasitic resistance in series with parallel combination of a voltage-controlled current source and an intrinsic capacitance. The voltage-controlled current source has an equivalent circuit model with a function stage for realizing current-voltage characteristic curve of the resonant tunneling diode. The function stage includes parallel combination of at least one first circuit branch, at least one second circuit branch and a third circuit branch. Each of the first and second circuit branches has a resistor, a diode and a voltage source. The third circuit branch has a resistor and a voltage source. The first and third circuit branches represent positive resistance sections, and the second and third circuit branches represent negative resistance sections of the current-voltage characteristic curve.

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