Method for producing a semiconductor device having semiconductor

Details Method for producing a semiconductor device having semiconductor Method for producing a semiconductor device having semiconductor

1996-04-24

1998-01-06

Niebling, John

Fishing, trapping, and vermin destroying

437 26, 437100, H01L 2122, H01L 2174

Patent

active

057054061

ABSTRACT:
A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer to form a second doped surface layer as a sub-layer therein, the second doped surface layer being surrounded, except for the top surface thereof, by the first semiconductor layer; and epitaxially growing a third semiconductor layer of SiC on top of the second layer of SiC and regions of the first layer adjacent thereto to totally bury the second semiconductor layer. The impurity dopant implanted into the first semiconductor layer is of a first conductivity n or p type, and the first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between the first and second layers.

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