Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1977-03-15
1978-10-03
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29577R, 156662, 148 335, 148190, 357 39, H01L 2122
Patent
active
041182570
ABSTRACT:
A process for producing a semiconductor arrangement having elemental semiconductor units or devices monolithically integrated in a semiconductor body with the units having one or a plurality of common zones of one conductivity type with locally reduced thickness and pn-junctions between zones of different conductivity types. A groove is formed, by etching, in one major surface of the semiconductor body in the portion thereof above the region corresponding to the device which is to have the zone of reduced thickness with the depth of the groove being determined by the intended reduction in thickness of the common zone of the completed arrangement. The semiconductor body, which is provided with diffusion masking layers on both of its major surfaces except for a portion of one major surface in the region corresponding to the device which is to have the zone of reduced thickness, is then subjected at both of its surfaces to the simultaneous diffusion of an acceptor doping substance and donor doping substance, with one of the doping substances being of the type which is capable of diffusing through the material of the masking layer, in order to form zones of differing conductivity types in the semiconductor body.
REFERENCES:
patent: 3146135 (1964-08-01), Sah
patent: 3287182 (1966-11-01), Kohl
patent: 3856586 (1974-12-01), Borchert et al.
patent: 3867203 (1975-02-01), Gesing et al.
patent: 3943016 (1976-03-01), Marcotte
Oberreuter Theodor
Schimmer Rigobert
Seifert Wilhelm
Licentia Patent-Verwaltungs-GmbH
Ozaki G.
LandOfFree
Method for producing a semiconductor device having monolithicall does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a semiconductor device having monolithicall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device having monolithicall will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1800347