Method for producing a semiconductor device having an insulated

Details Method for producing a semiconductor device having an insulated Method for producing a semiconductor device having an insulated

1980-09-30

1982-11-09

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148187, H01L 2126

Patent

active

043577474

ABSTRACT:
An insulated gate type field effect transistor forming one cell of a high density integrated circuit semiconductor memory device and a method for producing the same are disclosed. A channel stopper region of the same conductivity type as the substrate but having a higher impurity concentration is disposed contiguous to the width edge of the channel region, and a thick field oxide film is provided outside of the channel stopper region. The channel stopper region is self-aligned with the width edges of the gate electrode, and an insulator film having a thinner film thickness than that of the thick field oxide film is formed on the channel stopper region. In one embodiment, a second channel stopper region similar to the first is provided at the surface of the substrate under the field oxide film. A capacitor region is associated with the field effect transistor, and together they form a memory cell which is substantially surrounded by an isolating region including the thick field oxide film.

REFERENCES:
patent: 3752711 (1973-08-01), Kooi et al.
patent: 4114255 (1978-09-01), Salsbury et al.
patent: 4118728 (1978-10-01), Berry
patent: 4137109 (1979-01-01), Aiken et al.
patent: 4149904 (1979-04-01), Jones
patent: 4173819 (1979-11-01), Kinoshita
patent: 4268847 (1981-05-01), Kurakami et al.
Coe et al., Electronics, Feb. 19, 1976, pp. 116-121.
Faggin et al., Electronics, Sep. 20, 1969, pp. 88-94.
Stein et al., IEEE J. Of Solid State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 336-340.

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