Method for producing a semiconductor device having a LOCOS insul

Details Method for producing a semiconductor device having a LOCOS insul Method for producing a semiconductor device having a LOCOS insul

1991-06-26

1992-07-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437 69, 437 61, 437 52, H01L 2176

Patent

active

051282747

ABSTRACT:
There are provided semiconductor devices including a semiconductor substrate having a surface divided into a first and second regions, a plurality of active regions formed on the substrate, and a local-oxidized (LOCOS) insulating film formed on the substrate as an isolation region for electrical isolation of the active regions from each other. The LOCOS insulating film is thicker in the first region than in the second region, or the LOCOS insulating film has a difference in level based on the thickness change in the vicinity of the boundary between the first and second regions. Also provided are various methods for producing such semiconductor devices.

REFERENCES:
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4258466 (1981-03-01), Kuo et al.
patent: 4288910 (1981-09-01), Heeren
patent: 4466174 (1984-08-01), Darley et al.
patent: 4520553 (1985-06-01), Kraft

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