Method for producing a semiconductor device by the use of an imp

Details Method for producing a semiconductor device by the use of an imp Method for producing a semiconductor device by the use of an imp

1996-04-24

1997-10-07

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437100, H01L 21266

Patent

active

056747659

ABSTRACT:
A method for producing a semiconductor device comprising a step a) of implanting an impurity dopant of a first conductivity type into said semiconductor layer (1) being doped according to a second opposite conductivity type for forming a first type doped surface layer (2) surrounded, except for the top surface thereof, by second conductivity type doped regions (3) of said semiconductor layer for forming a pn-junction (4) at the interface thereto. A highly doped additional semiconductor layer (5) is grown on top of said surface layer (2) for forming a contact layer allowing a low resistance ohmic contact to be established to the device so created.

REFERENCES:
patent: 4775882 (1988-10-01), Miller et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 5270554 (1993-12-01), Palmour

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