Method for producing a semiconductor device by filling hollows w

Details Method for producing a semiconductor device by filling hollows w Method for producing a semiconductor device by filling hollows w

1989-03-23

1990-12-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 21225, H01L 21385

Patent

active

049771043

ABSTRACT:
A method is provided for producing a semiconductor device characterized by filling hollows having a high aspect ratio with a semiconductor film doped with impurities as dopants and an undoped semiconductor film, given that the doped polycrystalline Si film produced by thermal decomposition of reactive gases mixed with impurity gases and the undoped polycrystalline Si film produced by thermal decomposition of reactive gases containing no impurity gas have different step coverage characteristics from each other. The method allows uniform distribution of dopants as well as improvement of processing throughput by forming sequentially the two types of semiconductor films in one reaction chamber.

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Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane, 1984, pp. L482-L485.

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