Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1990-04-05

1993-02-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437912, H01L 21265

Patent

active

051871122

ABSTRACT:
A method for producing a field effect transistor includes depositing an insulating film on an active layer produced in a semiconductor substrate and removing a part of the insulating film, leaving a side wall substantially perpendicular to the substrate. A refractory metal is deposited on the surface of the semiconductor substrate and the insulating film. The refractory metal is removed except for a portion at the side wall of the insulating film to produce a gate electrode. A high dopant concentration region is ion implanted using the insulating film and refractory metal as a mask. The insulating film is removed and an intermediate dopant concentration region is ion implanted using the refractory metal as a mask. A source electrode is produced on the high dopant cocentration region and a drain electrode is produced on the intermediate dopant concentration region. The invention may be used to produce asymmetrically doped drain and gate regions and an asymmetrically disposed gate electrode.

REFERENCES:
patent: 4358340 (1982-11-01), Fu
patent: 4645563 (1987-02-01), Terada
patent: 4782031 (1988-11-01), Hagio et al.
patent: 4855246 (1989-08-01), Codella et al.
patent: 4962054 (1990-10-01), Shikata
patent: 4992387 (1991-02-01), Tamura
patent: 4997779 (1991-03-01), Kohno
Enoki et al., "Optimization of GaAs . . . MMIC", ED86-9, pp. 23-28.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2147947