Method for producing a semiconductor component

Details Method for producing a semiconductor component Method for producing a semiconductor component

2007-03-23

2009-11-10

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

C257S015000, C430S542000

Reexamination Certificate

active

07615847

ABSTRACT:
A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

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