Method for producing a semiconducting material

Compositions – Electrically conductive or emissive compositions – Free metal containing

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252514, 252512, 252518, 252519, 252520, 252516, 252521, 427249, 427255, 528 15, 528 16, 528 17, 528 14, 528 18, 528 19, H01B 104, H01B 102, C23C 1624, C23C 1632

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057004005

ABSTRACT:
A method for producing a semiconducting material by subjecting a hydrosilane monomer to dehydrogenative condensation followed by thermal decomposition is disclosed. The hydrosilane monomer may be a hydromonosilane, a hydrodisilane or a hydrotrisilane. The dehydrogenative condensation is conducted in the presence of a catalyst that contains at least one metal or metal compound of Groups 3B, 4B and 8 of the Periodic Table. The catalyst may be used in conjunction with a silane compound or a metal hydride. The semiconducting material that is formed may have a silicon content of 70 atomic % or more.

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