Method for producing a schottky diode in silicon carbide

Details Method for producing a schottky diode in silicon carbide Method for producing a schottky diode in silicon carbide

2005-05-24

2005-05-24

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Forming schottky junction

C438S092000, C438S169000, C438S931000

Reexamination Certificate

active

06897133

ABSTRACT:
The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which consist in forming an N-type lightly doped epitaxial layer (2); etching out a peripheral trench at the active zone of the diode; forming a type P doped epitaxial layer; carrying out a planarization process so that a ring (6) of the P type epitaxial layer remains in the trench; forming an insulating layer (3) on the outer periphery of the component, said insulating layer partly covering said ring; and depositing a metal (4) capable of forming a Schottky barrier with the N type epitaxial layer.

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