Method for producing a polycrystalline silicon structure and pol

Details Method for producing a polycrystalline silicon structure and pol Method for producing a polycrystalline silicon structure and pol

1998-02-25

2000-05-30

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of silicon containing

428620, 438 45, 438491, 438514, 438522, 438532, B32B 904, H01L 2136, H01L 21425

Patent

active

060689285

ABSTRACT:
A method for producing a polycrystalline silicon structure and a polycrystalline silicon layer to be produced by the method of first forming a primary silicon structure in an amorphous or polycrystalline form, and doping the structure with a dopant, in particular with oxygen, in a concentration exceeding the solubility limit. In a subsequent heat treatment, dopant precipitations are formed which control grain growth in a secondary structure being produced. Such a contact polycrystalline silicon structure can be used, in particular, as a connection of a monocrystalline silicon region.

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Widmann et al.: "Technologie hochintegrierter Schaltungen" Springer Verlag 1996, pp. 74-82, technology of high integrated circuits;.
Wolf et al.: "Silicon Processing", Lattice Press, 1987, pp. 161-197.

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