Method for producing a photovoltaic element with zno layer havin

Details Method for producing a photovoltaic element with zno layer havin Method for producing a photovoltaic element with zno layer havin

1998-08-17

2000-08-22

Codd, Bernard

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 96, 20419212, 20419215, 20419226, 20419228, C23C 1434, C23C 1408

Patent

active

061071161

ABSTRACT:
A photovoltaic element is formed by providing a substrate under vacuum; introducing a sputter gas and applying RF power to generate a plasma and provide a photovoltaic element having a substrate, a zinc oxide layer containing fluorine on the substrate, wherein a fluorine-containing zinc oxide layer is employed as a target.

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Hattori, et al. "High-Conductive Wide Band Gap P-Type a-SiC:H Prepared By ECR CVD and Its Application To High Efficiency a-Si Basis Solar Cells", 19th IEEE Photovoltaic Specialists Conf., pp. 689-694 (1987).
Abstract for JP-05-259692 of Kariya et al., May 2, 1995.

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