Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2007-10-16
2007-10-16
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S057000, C257SE21366
Reexamination Certificate
active
11088249
ABSTRACT:
The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermediate metal dielectric component and that has vias in a photoactive zone which are arranged on a pixel grid. Said vias extend through the intermediate metal dielectric component and are linked with respective strip conductors of the CMOS-ASIC circuit. A pixel-grid structured barrier layer, and on top thereof a CMOS metallization, are arranged on the intermediate metal dielectric component. The aim of the invention is to improve the characteristic variables of the photodiode by simple technological means. This object is achieved by removing at least the CMOS metallization present on the CMOS-ASIC circuit in the area of the photoactive zone except for the structured barrier layer and subsequently applying the multilayer system of the photodiode and the conductive transparent contact layer to the CMOS-ASIC circuit.
REFERENCES:
patent: 3971065 (1976-07-01), Bayer
patent: 4285007 (1981-08-01), Nakano et al.
patent: 5936261 (1999-08-01), Ma et al.
patent: 6111247 (2000-08-01), Sengupta
patent: 6373117 (2002-04-01), Theil
patent: 6586812 (2003-07-01), Cao
patent: 2004/0041224 (2004-03-01), Chao et al.
patent: 1113499 (2001-07-01), None
patent: WO 02/50921 (2002-02-01), None
International Search Report from International application No. PCT/DE02/03964, filed Oct. 10, 2002.
International Search Report from International application No. PCT/DE02/04008, filed Oct. 24, 2002.
Schneider et al.,Image Sensors In TFA(Thin Film on ASIC)Technology, Handbook of Computer Vision and Applications pp. 237 to 270, Academic Press, San Diego, 1999.
P. Rieve et al.,a-Si:H Color Imagers abd Colorimetry, Journal of Non-Crystalline Solids, vol. 266 to 269, pp. 1168 to 1172, (2000).
Schulte et al.,Intelligent Image Sensor For On-Chip Contour Extraction, Proceedings of the SPIE, SPIE, Bellingham, VA, vol. 2247, Jun. 22, 1994, pp. 292-300, XP002080272.
Theil et al.,Hydrogenated Amorphous Silicon Photodiode Technology for Advanced CMOS Active Pixel Sensor Images, Mat. Res. Soc. Symp. vol. 609, 2000 Materials Research Society pp. A14.31-A14.36.
Rieve Peter
Seibel Konstantin
Wagner Michael
Cao Phat X.
Jorgenson Lisa K.
Morris James H.
STMicroelectronics N.V.
Wolf Greenfield & Sacks P.C.
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