Method for producing a phase shift mask

Details Method for producing a phase shift mask Method for producing a phase shift mask

2005-01-11

2005-01-11

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S296000

Reexamination Certificate

active

06841316

ABSTRACT:
To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level—preferably of alternating attenuated phase shift masks—two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.

REFERENCES:
patent: 5482799 (1996-01-01), Isao et al.
patent: 44 35 773 (1995-04-01), None
patent: 0 773 477 (1997-05-01), None
patent: 0773477 (1997-05-01), None

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