Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2003-10-27
2008-12-16
Graybill, David E (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S522000, C438S012000, C438S013000, C438S039000, C438S040000, C438S042000, C438S043000, C438S044000, C438S115000, C438S458000, C438S459000, C438S626000, C438S632000, C438S633000, C438S689000, C438S659000, C438S940000, C438S963000, C438S977000, C438S690000, C438S660000, C438S781000, C438S799000
Reexamination Certificate
active
07465977
ABSTRACT:
There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity, and having a heating element on the micro-structure capable of heating itself and its immediate surroundings. A layer of protective material is then deposited on said micro-structure such that at least a top surface of the micro-structure and an opening of the micro-cavity is covered, wherein the protective material is in a solid state at room temperature and can protect the micro-structure during silicon wafer dicing procedures and subsequent packaging. The integrated circuit is packaged and an electric current is passed through the heating element such that a portion of the protective material is removed and an unobstructed volume is provided above and below the micro-structure.
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Grudin Oleg
Landsberger Leslie M.
Graybill David E
Microbridge Technologies Inc.
Ogilvy Renault LLP
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