Method for producing a p-doped semiconductor region in an n-cond

Details Method for producing a p-doped semiconductor region in an n-cond Method for producing a p-doped semiconductor region in an n-cond

1987-08-19

1989-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437165, 437151, 437143, H01L 21223, H01L 21383

Patent

active

048206563

ABSTRACT:
A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself is located within a refractory tube. The refractory tube is evacuated to a very low pressure and then the interior of the tube is heated for a time and at a temperature sufficient to diffuse both aluminum and boron into the semiconductor body.

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Rosnowski, W., J. Electrochem. Soc., "Aluminum Diffusion into Silicon in an Open Tube High Vacuum System," vol. 125, No. 6, Jun. 1978, pp. 957-962.
Warner, Jr., R. M. et al., Integrated Circuits: Design Principles and Fabrication, McGraw-Hill Book Co., N.Y., N.Y., 1965, pp. 293-295.

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