Method for producing a nonvolatile memory device

Details Method for producing a nonvolatile memory device Method for producing a nonvolatile memory device

1979-08-15

1981-04-28

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, H01L 21324

Patent

active

042643767

ABSTRACT:
A metal-silicon nitride-silicon oxide-substrate (MNOS) type nonvolatile memory device is disclosed. After the silicon nitride film has been formed, the heat treatment in the hydrogen atmosphere is performed. As a result of this heat treatment, the degradation of the memory retention characteristic is prevented so that a nonvolatile memory device having a silicon gate can be obtained which is comparable to a conventional nonvolatile memory device having an aluminum gate.

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patent: 3617824 (1971-11-01), Shinoda et al.
patent: 4055444 (1977-10-01), Ran
patent: 4075045 (1978-02-01), Rideout
patent: 4079504 (1978-03-01), Kosa
patent: 4149307 (1979-04-01), Henderson
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4151538 (1979-04-01), Polinsky et al.
Chen, 1EEE Transactions on Electron Devices, vol. Ed-24, No. 5, May 1977, pp. 584-586.

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