Fishing – trapping – and vermin destroying
Patent
1992-01-27
1994-03-29
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 2, 437 4, 437108, H01L 2100, H01L 2102, H01L 2120
Patent
active
052984559
ABSTRACT:
A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
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Scheid et al., Japanese Journal Of Applied Physics, vol. 29, No. 11, Nov. 1990, Tokyo JP, pp. L2105-L2107.
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Arai Michio
Fukada Takeshi
Furukawa Nobuo
Hiroki Masaaki
Ikeda Masaaki
Everhart B.
Hearn Brian E.
Novack Martin
TDK Corporation
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