Method for producing a nitride semiconductor element

Details Method for producing a nitride semiconductor element Method for producing a nitride semiconductor element

2005-07-12

2005-07-12

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S034000, C438S047000, C438S455000, C438S458000, C438S459000

Reexamination Certificate

active

06916676

ABSTRACT:
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.

REFERENCES:
patent: 9-8403 (1997-01-01), None
patent: 09-129932 (1997-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 11-214744 (1999-08-01), None
patent: 2000-196152 (2000-07-01), None
patent: 2001-284641 (2001-10-01), None
patent: 2001-298214 (2001-10-01), None
patent: 2001-313422 (2001-11-01), None

Affiliated with

Also associated with

Rating

Method for producing a nitride semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a nitride semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a nitride semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3390678