Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-05-20
2010-12-07
Le, Dung Anh (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C438S468000, C438S508000
Reexamination Certificate
active
07846816
ABSTRACT:
Process for producing a multilayer structure that includes, within the depth thereof, a separating layer, including: producing an initial multilayer structure comprising a base substrate, a surface substrate and, between the base substrate and the surface substrate, an absorbent layer that can absorb a light power flux in at least one zone and a liquefiable intermediate layer that includes, in at least one zone, impurities having a coefficient of segregation relative to the material constituting this intermediate layer of less than unity; and in subjecting, for a defined time and in the form of at least one pulse, said initial structure to said light power flux, this flux being regulated so as to liquefy at least one portion of said intermediate layer under the effect of the propagation of the thermal energy, in such a way that it results, thanks to the initial presence of said impurities, in a modification of at least one characteristic and/or of at least one property of said intermediate layer arising from the at least partial solidification of said intermediate layer, such that this intermediate layer at least partially constitutes a separating layer.
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Search Report for French Application No. 0405883, 1 page.
Le Dung Anh
Meyertons Eric B.
Meyertons Hood Kivlin Kowert & Goetzel P.C.
S.O.I. Tec Silicon on Insulator Technologies
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