Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-07-12
1984-06-12
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 29591, 148187, 156626, 156651, H01L 2122, H01L 21285
Patent
active
044533055
ABSTRACT:
A method for producing a MISFET having a gate electrode formed at the base of a grooved recess. The grooved recess is formed with steep side-walls (e.g., be reactive ion etching, ion beam milling or by using an orientation dependent etchant) and gate and source and drain contacts are formed by the simultaneous deposition of conductive material (e.g., metal evaporated from a point source.) Steepness of the side-walls of the recess ensures separation of the conductive material, isolating the gate electrode from the remaining conductive material providing the source and drain contacts.
A silicon MISFET may be produced, using a diazine catalyzed ethylenediamine-pyrocatechol-water solution etchant, and exposing the (110) crystal plane face of the silicon to the etchant to form the recess.
REFERENCES:
patent: 3675313 (1972-07-01), Driver et al.
patent: 4004341 (1977-01-01), Tung
patent: 4145459 (1979-03-01), Goel
patent: 4157610 (1979-06-01), Kamei et al.
D. L. Kendall, "On Etching Very Narrow Grooves in Silicon", Appl. Phys. Letters, vol. 26, No. 4, (Feb. 15, 1975), pp. 195-198.
K. E. Bean, "Anisotropic Etching of Silicon", IEEE Trans. Electron Devices, vol. ED-25, No. 10, pp. 1185-1193, (Oct. 1978).
"Reliability and Degradation--Semi-conductor Devices and Circuits" by Howes et al., John Wiley & Sons, N.Y., p. 204.
"Solid State Physics" by A. J. Dekker, Macmillan and Co., Ltd., 1960, p. 9.
"Introduction to Solid State Physics" by C. Kittel, John Wiley and Sons, Inc., 3rd Edition, N.Y., p. 22.
Ammar et al., IEEE Transactions on Electron Devices, vol. ED-27, No. 5, May 1980, pp. 907-914.
Jackson et al., IEEE Electron Device Letters, vol. EDL-2, No. 2, Feb. 1981, pp. 44 and 45.
Reisman et al., Journal of the Electrochemical Society, vol. 126, No. 8, Aug. 1979, pp. 1406-1415.
Janes Timothy W.
White John C.
Ozaki G.
The Secretary of State for Defence in Her Britannic Majesty's Go
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