Method for producing a luminous element of III-group nitride

Details Method for producing a luminous element of III-group nitride Method for producing a luminous element of III-group nitride

1995-03-28

1996-03-05

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437129, 117952, H01L 2120

Patent

active

054967660

ABSTRACT:
Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added, comprising the steps of forming a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.

REFERENCES:
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S. Nakamura et al., "Thermal Annealing Effects on P-Type Mg-Doped GaN Films," Japanese Journal of Applied Physics, vol. 31 (1992) pp. L139-L142.
H. Amano et al., "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)" Japanese Journal of Applied Physics, vol.28, No. 12, Dec. 1989, pp. L2112-L2114.

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